SPT offers solutions for Atmospheric Pressure CVD of SiH4 or TEOS based dielectrics. Our patented Watkins Johnson (WJ) linear injector technology enables precise, repeatable deposition of doped or un-doped films with no transient film properties and uniform gap fill across the wafer.

 Wafer transport is via a self-cleaning belt conveyor enabling excellent system reliability with the lowest CoO for dielectric gap-fill.

Factory-certified re-manufactured systems are available with the following platform options:

WJ-999 - 3 process chambers for TEOS and hydride processes

WJ-1000 – 4 process chambers for TEOS and hydride processes

WJ-1500 - 4 chambers for TEOS processes only