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首页 >> 美国ESDEMC专区 >> ES660 ESD And Latch-UP Test System

ES660 ESD And Latch-UP Test System

ES660系列ESD和LU测试系统是先进的多引脚自动化测试设备，旨在满足现代半导体测试的严格要求。这种多功能设备旨在无缝支持人体模型（HBM）、机器模型（MM）和闩锁测试，为评估集成电路（IC）和电子元件的可靠性和稳健性提供全面的解决方案。

ES660-P1可支持1024个引脚，是测试具有多种连接的复杂IC和电子元件的理想选择。其高引脚计数能力确保了能够准确高效地评估大型设备，减少了测试时间并提高了生产力。

为了获得更高的引脚数，ES660-P2型号（2048个引脚）已列入开发路线图。

特点

与多种测试方法和标准的兼容性

高度灵活的偏置和引脚计数配置能力

自动化测试效率

高级控制和监控

泄漏和直流扫描

数据分析

应用程序

半导体器件ESD测试

HBM模块符合ANSI/ESDA/JEDEC JS-001、MIL-STD-883E、AEC Q100-002

MM模块符合ANSI/ESDA SP5.2

闩锁选项符合JEDEC JESD78

ANSI/ESD SP5.4.1的瞬态锁存挂起

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商品描述

ES660系列ESD和LU测试系统是先进的多引脚自动化测试设备，旨在满足现代半导体测试的严格要求。这种多功能设备旨在无缝支持人体模型（HBM）、机器模型（MM）和闩锁测试，为评估集成电路（IC）和电子元件的可靠性和稳健性提供全面的解决方案。

ES660-P1可支持1024个引脚，是测试具有多种连接的复杂IC和电子元件的理想选择。其高引脚计数能力确保了能够准确高效地评估大型设备，减少了测试时间并提高了生产力。

为了获得更高的引脚数，ES660-P2型号（2048个引脚）已列入开发路线图。

特点

与多种测试方法和标准的兼容性

高度灵活的偏置和引脚计数配置能力

自动化测试效率

高级控制和监控

泄漏和直流扫描

数据分析

应用程序

半导体器件ESD测试

HBM模块符合ANSI/ESDA/JEDEC JS-001、MIL-STD-883E、AEC Q100-002

MM模块符合ANSI/ESDA SP5.2

闩锁选项符合JEDEC JESD78

ANSI/ESD SP5.4.1的瞬态锁存挂起

1.简介

ES660系列ESD和LU测试系统是先进的多引脚自动化测试设备，旨在满足现代半导体测试的严格要求。这种多功能设备旨在无缝支持人体模型（HBM）、机器模型（MM）和闩锁测试，为评估集成电路（IC）和电子元件的可靠性和稳健性提供全面的解决方案。

ES660-P1可支持1024个引脚，是测试具有多种连接的复杂IC和电子元件的理想选择。其高引脚计数能力确保了能够准确高效地评估大型设备，减少了测试时间并提高了生产力。

为了获得更高的引脚数，ES660-P2型号（2048个引脚）已列入开发路线图。

2.特点

与多种测试方法和标准的兼容性

高度灵活的偏置和引脚计数配置能力

自动化测试效率

高级控制和监控

泄漏和直流扫描

数据分析

3.应用

半导体器件ESD测试

HBM模块符合ANSI/ESDA/JEDEC JS-001、MIL-STD-883E、AEC Q100-002

MM模块符合ANSI/ESDA SP5.2

闩锁与JEDEC JESD78相遇

ANSI/ESD SP5.4.1-2022的瞬态锁存挂起

4. Specifications

ES660-P1 Base Unit

Parameters	ES660-P1	Unit	Comments
Touch Screen	5	inch
Dimensions	480 X 497.5 X 265	mm
Weight	28	kg	Full installation
ESD and LU Waveform	Optional Passive voltage and current probes
Supported Oscilloscope	Majority models from Keysight, Tektronix, LeCroy, Rigol,		Customizable
Supported SMU	Majority models from Keysight, Tektronix, LeCroy, Rigol,		Customizable
Supported PSU	Majority models from Keysight, Tektronix, LeCroy, Rigol.		Customizable

HBM Human Body Model Option

(ANSI/ESDA/JEDEC JS-001-2023)

Parameters	ES660-P1-HBM8	ES660-P1-HBM10	Unit	Comments
Output voltage	±10 ~ 8000	±10 ~ 10000	V
Discharge RC Value	C: 100 pF ± 10%, R: 1.5kΩ ± 1%
Short Load Peak Current Ips	0.67 ± 10 % per kV		A
Short Load Rise Time trs	2 < trs < 10		ns
Short Load Decay Time tds	130 < tds < 170		ns
Short Load Ringing trs	< 15% of Ips
500 Ω Load Peak Current Ipr	Ipr/Ips ≥ 63%
500 Ω Load Rise Time trr	5 < trr < 25		ns

MM Machine Model Option

(ANSI/ESD SP5.2-2019)

Parameters	ES660-P1-MM2	ES660-P1-MM4	Unit	Comments
Output Voltage	±10 ~ 2000	±10 ~ 4000	V
Discharge RC Value	C: 200 pF, R: 0 Ω
Short Load Peak Current Ip1	1.75±10% per 100V		A
Short Load Ip2	67% ~ 90% of Ip1		A
Short Load Pulse Period tpm	66 < tpm < 90		ns
500 Ω Load Peak Current Ipr	0.85 – 1.2		A	@400V condition per standard
500 Ω Load I100	0.23 – 0.4		A	@400V condition per standard

LU Latch-Up Option

(JEDEC JESD78F.01)

Parameters	ES660-P1-LU	Comments
Preconditioning Vectors	≥ 20 MHz, 256K Depth	External Setup
V/I 4-wire Kelvin Measurements	Y
DUT V/I Bus Supplies	3+1, 5+1, 7+1
LU Waveform Capture	Y

TLU Transient Latch-Up Option

(ANSI/ESD SP5.4.1)

Hardware-supported for Latch-Up Transient Pulse Source:

TLP, vf-TLP, EOS, MM

software on the roadmap.

5. Ordering Information

Line	Part # or Option #	Description
Base Unit Options
1.1	ES660-P1-BU	Relay Based HBM/MM/LU ATE System Base unit
1.2	ES660-P1-HBM8	Human Body Model capability up to 8 kV
1.3	ES660-P1-HBM10	Human Body Model capability up to 10 kV
1.4	ES660-P1-MM2	Machine Model capability up to 2 kV
1.5	ES660-P1-MM4	Machine Model capability up to 4 kV
1.6	ES660-P1-LU	Latch-up capability (Software)
1.7	ES660-P1-TLU	Transient Latch-up capability (Software)
Relay Card with Bias Options
2.1	ES660-P1-R64B4	Expansion Relay Card for additional 64 Pin, 4 Bias
2.2	ES660-P1-R64B6	Expansion Relay Card for additional 64 Pin, 6 Bias
2.3	ES660-P1-R64B8	Expansion Relay Card for additional 64 Pin, 8 Bias
DC & Leakage & LU Pulse Source Options
3.1	ES660-PSMU2	LeakageDCLU Source: Dual Channels Pulsed SMU (210V/1.5A)
3.2	ES660-SMU1	LeakageDC Source: Single Channel SMU (200V/1A)
3.3	ES660-PSU1	DC Source: Flex Channels PSU (30V/3A X 2 Ch, or 60V/3A X 1 Ch)
3.4	ES660-PSU2	DC Source: 3-Channels PSU (60V/3A X 2 Ch, 5V/3A X 1 Ch)
3.4	ES660-PSU3	DC Source: High Current PSU (20V/20A X 1 Ch)
Test Socket Options
4.1	ES660-P1-DS512	DUT Socket PCB 512 Pin
4.2	ES660-P1-DS1024	DUT Socket PCB 1024 Pin
4.3	ES660-P1-DSC1	DUT Socket PCB Customized Pin Count
Oscilloscope Options
5.1	MISC-OSC1	Digital Oscilloscope (1 GHz, 5 GS/s, 4 Ch)
5.2	CT-T03-1p0	Broadband Current Probe, 1V/A, 2kHz – 2GHz

ES660 ESD And Latch-UP Test System

1. Introduction

The ES660 series ESD and LU Test system is advanced technique, multi-pin automated testing equipment designed to meet the rigorous demands of modern semiconductor testing. This versatile device is engineered to seamlessly support the Human Body Model (HBM), Machine Model (MM), and Latch-Up testing, offering a comprehensive solution for assessing the reliability and robustness of integrated circuits (ICs) and electronic components.

With the capability to support up to 1024 pins, the ES660-P1 is ideal for testing complex ICs and electronic components with a multitude of connections. Its high pin count capacity ensures that one can evaluate large-scale devices with precision and efficiency, reducing testing time and enhancing productivity.

For higher pin count, model ES660-P2 (up to 2048 pins) is on the development roadmap.

2. Features

Compatibility with Multiple Testing Methods & Standards
Highly Flexible Bias and Pin Count Configuration Capability
Automated Testing Efficiency
Advanced Control and Monitoring
Leakage & DC Sweep
Data Analysis

3. Applications

Semiconductor device ESD testing
HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
MM module meets ANSI/ESDA SP5.2
Latch-up meets JEDEC JESD78
Transient Latch-up pending for ANSI/ESD SP5.4.1-2022

4. Specifications

ES660-P1 Base Unit

Parameters	ES660-P1	Unit	Comments
Touch Screen	5	inch
Dimensions	480 X 497.5 X 265	mm
Weight	28	kg	Full installation
ESD and LU Waveform	Optional Passive voltage and current probes
Supported Oscilloscope	Majority models from Keysight, Tektronix, LeCroy, Rigol,		Customizable
Supported SMU	Majority models from Keysight, Tektronix, LeCroy, Rigol,		Customizable
Supported PSU	Majority models from Keysight, Tektronix, LeCroy, Rigol.		Customizable

HBM Human Body Model Option

(ANSI/ESDA/JEDEC JS-001-2023)

Parameters	ES660-P1-HBM8	ES660-P1-HBM10	Unit	Comments
Output voltage	±10 ~ 8000	±10 ~ 10000	V
Discharge RC Value	C: 100 pF ± 10%, R: 1.5kΩ ± 1%
Short Load Peak Current Ips	0.67 ± 10 % per kV		A
Short Load Rise Time trs	2 < trs < 10		ns
Short Load Decay Time tds	130 < tds < 170		ns
Short Load Ringing trs	< 15% of Ips
500 Ω Load Peak Current Ipr	Ipr/Ips ≥ 63%
500 Ω Load Rise Time trr	5 < trr < 25		ns

MM Machine Model Option

(ANSI/ESD SP5.2-2019)

Parameters	ES660-P1-MM2	ES660-P1-MM4	Unit	Comments
Output Voltage	±10 ~ 2000	±10 ~ 4000	V
Discharge RC Value	C: 200 pF, R: 0 Ω
Short Load Peak Current Ip1	1.75±10% per 100V		A
Short Load Ip2	67% ~ 90% of Ip1		A
Short Load Pulse Period tpm	66 < tpm < 90		ns
500 Ω Load Peak Current Ipr	0.85 – 1.2		A	@400V condition per standard
500 Ω Load I100	0.23 – 0.4		A	@400V condition per standard

LU Latch-Up Option

(JEDEC JESD78F.01)

Parameters	ES660-P1-LU	Comments
Preconditioning Vectors	≥ 20 MHz, 256K Depth	External Setup
V/I 4-wire Kelvin Measurements	Y
DUT V/I Bus Supplies	3+1, 5+1, 7+1
LU Waveform Capture	Y

TLU Transient Latch-Up Option

(ANSI/ESD SP5.4.1)

Hardware-supported for Latch-Up Transient Pulse Source:

TLP, vf-TLP, EOS, MM

software on the roadmap.

5. Ordering Information

Line	Part # or Option #	Description
Base Unit Options
1.1	ES660-P1-BU	Relay Based HBM/MM/LU ATE System Base unit
1.2	ES660-P1-HBM8	Human Body Model capability up to 8 kV
1.3	ES660-P1-HBM10	Human Body Model capability up to 10 kV
1.4	ES660-P1-MM2	Machine Model capability up to 2 kV
1.5	ES660-P1-MM4	Machine Model capability up to 4 kV
1.6	ES660-P1-LU	Latch-up capability (Software)
1.7	ES660-P1-TLU	Transient Latch-up capability (Software)
Relay Card with Bias Options
2.1	ES660-P1-R64B4	Expansion Relay Card for additional 64 Pin, 4 Bias
2.2	ES660-P1-R64B6	Expansion Relay Card for additional 64 Pin, 6 Bias
2.3	ES660-P1-R64B8	Expansion Relay Card for additional 64 Pin, 8 Bias
DC & Leakage & LU Pulse Source Options
3.1	ES660-PSMU2	Leakage\DC\LU Source: Dual Channels Pulsed SMU (210V/1.5A)
3.2	ES660-SMU1	Leakage\DC Source: Single Channel SMU (200V/1A)
3.3	ES660-PSU1	DC Source: Flex Channels PSU (30V/3A X 2 Ch, or 60V/3A X 1 Ch)
3.4	ES660-PSU2	DC Source: 3-Channels PSU (60V/3A X 2 Ch, 5V/3A X 1 Ch)
3.4	ES660-PSU3	DC Source: High Current PSU (20V/20A X 1 Ch)
Test Socket Options
4.1	ES660-P1-DS512	DUT Socket PCB 512 Pin
4.2	ES660-P1-DS1024	DUT Socket PCB 1024 Pin
4.3	ES660-P1-DSC1	DUT Socket PCB Customized Pin Count
Oscilloscope Options
5.1	MISC-OSC1	Digital Oscilloscope (1 GHz, 5 GS/s, 4 Ch)
5.2	CT-T03-1p0	Broadband Current Probe, 1V/A, 2kHz – 2GHz

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