EMC电磁兼容和可靠性分析仪器、仪表、设备综合服务供应商
芯片级、板级、系统级ESD静电抗扰和EMI电磁干扰测试方案定制商
ES620便携式脉冲 IV-曲线测试分析系统是我们2015年研发的新一代产品。这是一款先进的便携式脉冲IV-曲线特性表征系统,用于模拟静电放电脉冲事件,例如 TLP, vf-TLP, HMM, HBM, EFT, 和 低压浪涌。系统会检测脉冲期间皮秒或纳秒级的瞬态电压和电流波形,并测试脉冲前、后被测器件的状态(漏电流,击穿电压,偏置电流,静态IV曲线,等)。可测的DUT包括静电防护器件,半导体,电路模块,触摸板传感器等。
特点:
配置灵活的TLP IV曲线脉冲测试分析系统
超便携设计
超快测试速度,程序并行处理
目前测试版本有 25 A, 50 A,和100 A 模块
高质量TLP脉冲
可扩展的测试模块包括 vf-TLP, HMM, HBM, 和低压浪涌
自动化故障检测方法包括:
DC 抽查 (电压或电流), 静态IV, 熔融, 击穿, 偏置源波动, 以及客户自定义
软件控制的脉冲注入: 单次, 连续, IV-曲线表征
上升沿选项:60 ps 至 50 ns *(取决于模块)
脉冲宽度选项: 1 ns 至 3200 ns *(取决于模块)
分类: 脉冲IV曲线测试方案标签: HBM, HMM, IV曲线, TLP测试, 低压浪涌, 特色产品, 超快TLP, 静电放电
ES620便携式脉冲 IV-曲线测试分析系统是我们2015年研发的新一代产品。这是一款先进的便携式脉冲IV-曲线特性表征系统,用于模拟静电放电脉冲事件,例如 TLP, vf-TLP, HMM, HBM, EFT, 和 低压浪涌。系统会检测脉冲期间皮秒或纳秒级的瞬态电压和电流波形,并测试脉冲前、后被测器件的状态(漏电流,击穿电压,偏置电流,静态IV曲线,等)。可测的DUT包括静电防护器件,半导体,电路模块,触摸板传感器等。
特点:
配置灵活的TLP IV曲线脉冲测试分析系统
超便携设计
超快测试速度,程序并行处理
目前测试版本有 25 A, 50 A,和100 A 模块
高质量TLP脉冲
可扩展的测试模块包括 vf-TLP, HMM, HBM, 和低压浪涌
自动化故障检测方法包括:
DC 抽查 (电压或电流), 静态IV, 熔融, 击穿, 偏置源波动, 以及客户自定义
软件控制的脉冲注入: 单次, 连续, IV-曲线表征
上升沿选项:60 ps 至 50 ns *(取决于模块)
脉冲宽度选项: 1 ns 至 3200 ns *(取决于模块)
分类: 脉冲IV曲线测试方案标签: HBM, HMM, IV曲线, TLP测试, 低压浪涌, 特色产品, 超快TLP, 静电放电
(一)产品描述
ES620 便携式TLP IV-曲线测试分析系统是2015年研发的新一代产品。这是一套先进的便携式脉冲IV曲线表征系统,用于模拟静电放电脉冲事件,例如TLP,Vf-TLP,HMM,HBM,EFT,以及低压浪涌。该系统可以监测脉冲发生时,Ps或ns量级的瞬态电压和电流波形,并测试DUT在测试前、后的状态(漏电流、击穿电压、静态IV曲线等)。可测试的DUT包括静电防护器件、半导体、电路模块、触摸板传感器等。
系统的传输线脉冲(TLP)测试和分析功能符合ANSI/ESD STM5.5.1-2014测试标准。ES620系统能够向器件注入高质量矩形波脉冲,同时记录流经器件的电流和器件两端电压。测试结果能够提供脉冲IV曲线,使用户能够表征器件在纳秒级的瞬态响应。系统还具有先进的器件失效自动化检测方法,例如漏电流测试,静态IV曲线,熔断和火花放电。
超快TLP(vf-TLP)测试和分析功能符合ANSI/ESD SP5.5.2-2007测试标准。vf-TLP 测试用于模拟CDM速度的静电放电,捕捉高速(大约100ps上升沿)状态下器件的电流和电压。用户可以通过这种方法测试器件的响应速度和峰值电压。
人体金属模型(HMM)测试和分析功能符合ANSI/ESD SP5.6-2009测试方法。该方法可以替代IEC61000-4-2中系统级ESD测试方法,用于测试IC。当测试低阻抗器件或者晶圆时,系统的该测试功能可以提供符合IEC61000-4-2标准的理想波形,并且避免许多静电放电枪测试时可能出现的问题,例如可重复性差,放电位置不精确,由未屏蔽继电器产生的EMI互扰,需要设置大接地平板和耦合板。
系统有完整的软件控制,可定制上升沿时间和脉冲宽度,与IVI仪器有良好的兼容性,体积小,价格优惠。
ES620 TLP测试系统符合下列国际测试标准:
ANSI/ESD STM5.5.1-2014 – Electrostatic Discharge (ESD) Sensitivity Testing – Transmission Line Pulse (TLP) – Component Level
ANSI/ESD SP5.5.2-2007 – Electrostatic Discharge (ESD) Sensitivity Testing – Very Fast Transmission Line Pulse (VF-TLP) – Component Level
ANSI/ESD SP5. 6-2009 – Electrostatic Discharge Sensitivity Testing – Human Metal Model (HMM) – Component Level
ANSI/ESDA/JEDEC JS-001-2014 – Electrostatic Discharge Sensitivity Testing – Human Body Model (HBM) – Component Level.
(二)应用领域
晶圆级ESD测试
PCB/封装级ESD测试
系统/电路ESD测试
安全工作区(SOA)测试
充电恢复时间测试
查分ESD脉冲注入
触摸屏ITO微带线熔断测试
触摸屏ITO微带线火花放电测试
TLP注入电流脉冲符合并超过ANSI/ESD STM5.5.1-2008标准
Vf-TLP注入电流脉冲符合并超过ANSI/ESD SP 5.5.2-2007标准
对于低阻抗器件,HMM的注入电流脉冲与IEC61000-4-2波形相符
(三)产品规格
ES620 基于传输线脉冲的 IV-曲线测试系统
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参量 | ES620-25 | ES620-50 | ES620-100 | 单位 | 备注 |
开路输出电压 | ± 0.5 ~ 1250 | ± 0.5 ~ 2500 | ± 0.5 ~ 5000 | V | |
50 Ω负载时,输出电压 | ± 0.25 – 625 | ± 0.5 ~ 1250 | ± 0.5 ~ 2500 | V | |
50 Ω负载时,最小电压步长 | 0.01 | 0.01 | 0.02 | V | 带 46 dB 反射抑制 |
最低电压 – 40 V | |||||
50 Ω负载时,最小电压步长 | 0.1 | 0.1 | 0.2 | V | 带6 dB 反射抑制 |
40V 至 最高电压 | |||||
输出电压误差 | < 5 % | % | 自校准后 | ||
短路输出电流 | ± 0.01 ~ 25 | ± 0.02 ~ 50 | ± 0.04 ~ 100 | A | |
50 Ω负载时,输出电流 | ± 0.005 ~ 12.5 | ± 0.01 ~ 25 | ± 0.02 ~ 50 | A | |
50 Ω负载时,峰值功率 | ≥ 7.813 | ≥ 31.25 | ≥ 125 | kW | |
自带TLP上升沿时间 | ≤ 0.2 | ≤ 0.2 | ≤ 0.3 | ns | ES620-25可达 60 ps |
其他上升沿时间选项 | 0.06 ~ 50 | ns | 与模型有关,请看表2 | ||
自带TLP 脉冲宽度 | 100 ± 1 | ns | 自定义 | ||
其他脉宽选项 | 1 ~ 3200 | 5 ~ 1000 | 5 ~ 1000 | ns | 与模型有关,请看表3 |
测试间隔时间 | 一般为0.2 ~ 2 | s | 与示波器,SMU和规定有关 | ||
尺寸 | 347 X 300 X 145 | mm | |||
重量 | 5 | 6 | 8 | kg | |
I &V 直接测量 | I &V 直接测量探头A6213-T1 (CT-2电流探头 和 1K T型电压探头) | ||||
可配用示波器 | Tektronix, Agilent, LeCroy, Rigol的大部分型号 | 其他型号可根据客户需求进行匹配支持 | |||
可配用SMU | Keithley 24xx/26xx系列 SMU | 其他型号可根据客户需求进行匹配支持 | |||
ES620-HMM1 扩展的人体金属模型模块 | |||||
(DUT为短路, 100 Ω HMM ,基于ANSI/ESD SP5.6-2009标准) | |||||
参数 | ES620-25 | ES620-50 | ES620-100 | 单位 | 备注 |
HMM 首个峰值电流 | 22.5 | 45 | 90 | A | 每千伏3.75 A ≤ ± 10 % |
IEC 61000-4-2 (R=330Ω, C=150pF) | |||||
30 ns时的HMM 电流 | 12 | 24 | 48 | A | ≤ ± 10 % (优于IEC 的±30% ) |
60 ns时的HMM 电流 | 6 | 12 | 24 | A | ≤ ± 10 % (优于IEC的 ±30% ) |
ES620-HBM1 扩展的人体模型模块 | |||||
(ANSI/ESDA/JEDEC JS-001-2014 R=1.5 kΩ, C=100 pF) | |||||
参数 | ES620-25 | ES620-50 | ES620-100 | 单位 | 备注 |
最大HBM 测试等级 | ± 2 | ± 4 | ± 8 | Kv | |
最小HBM 测试等级 | ± 10 | V | |||
最小测试步长 | 1 | V | 通过USB,以PCB 控制 | ||
电荷泄放电阻 | 10 K | Ohm | |||
输出电压灵敏度 | 1/201 | V/V | 注入50 Ohm时误差小于± 3% | ||
电流传感器灵敏度 | 1 | V/A | 注入50 Ohm时误差小于± 3% | ||
DC 测试串联电阻 | |||||
测试间隔时间 | >= 1 | S | 根据标准,最大 1P/S | ||
物理尺寸 | 90 X 90 X 130 | mm |
(四)订购信息
序号
| 部件# / 选项 # | 说明 |
TLP IV-曲线测试系统基本配置 | ||
1.1 | ES620-25 | ES620 便携式 TLP IV-曲线测试传输线脉冲单元, 最大短路电流25 A |
1.2 | ES620-50 | ES620 便携式 TLP IV-曲线测试传输线脉冲单元, 最大短路电流 50 A |
1.3 | ES620-100 | ES620 便携式 TLP IV-曲线测试传输线脉冲单元, 最大短路电流 100 A |
脉冲上升沿时间选项 | ||
2.1 | ES620-VF | 将系统固有TLP上升时间升级到最快极限值 |
2.2 | ES62x-PRT4 | 程控的脉冲上升沿滤波器 X4 模块 |
(默认: 固有值, 1 ns, 5 ns, 10 ns, 可定制) | ||
2.3 | ES62x-PRT7 | 程控的脉冲上升沿滤波器 X7 模块 |
(默认: 固有值, 0.5ns, 1 ns, 2ns, 5 ns, 10 ns, 20ns, 可定制) | ||
2.4 | ES62x-ERTF | 外接上升沿滤波器 (0.1 ~ 50 ns,可定制) |
脉冲宽度选项 | ||
3.1 | ES620-MPLEx | 手动脉宽外接扩展更换 |
3.2 | ES620-PPL4 | 程控的内部脉宽X4 模块 |
3.3 | ES620-PPL7 | 程控的内部脉宽 X7 模块 |
外接脉冲模块选项 | ||
4.1 | ES620-HBM1 | 人体模型(HBM) ESD 脉冲模块和测试装置 |
(基于ANSI/ESDA/JEDEC JS-001-2014 的脉冲测试及IV 测量) | ||
4.2 | ES620-HMM1 | 人体金属模型(HMM) ESD 脉冲模块和测试装置 |
( 基于IEC61000-4-2 的脉冲测试及IV 测量) | ||
4.3 | ES620-LVS1 | 低压浪涌脉冲模块和测试装置 |
( 基于IEC61000-4-5 的脉冲测试及IV 测量) | ||
DC 偏置& 漏电流测量选项 | ||
5.1 | ES62X -LTK2400 | 漏电流测试,搭配Keithley 2400 SMU |
5.2 | ES62X -LTKSEM | 漏电流测试开关模块,单端口ESD注入时使用 |
5.3 | ES62X -BTK2220 | 与TLP集成的程控双通道DC源,用作偏置控制 |
5.4 | ES62X-BT1 | 高频响TLP测试偏置器, 300 kHz – 20 GHz, 1A DC电流 |
5.5 | ES62X-BT2 | 大电流TLP 测试偏置器, 30 kHz – 6GHz, 2A DC 电流 |
ESD 注入和IV曲线测量选项 | ||
6.1 | ES62X-CTX | 用于器件测试的重叠时域反射测试装置 |
6.2 | ES62X-VFM | 用于高速VF-TLP测试的非重叠时域反射测试装置 |
6.3 | ES62X-CMPS | 便携式手动探针台,配有可灵活移动的真空泵和显微镜 |
6.4 | ES62x-XYZR | 高精度XYZ 微距调整器,带2个同轴高分辨率 100:1 (或 50:1) 可旋转探针夹具,2个固定探针夹具 |
6.5 | ES62x-DIFESD | 差分ESD注入及IV测量 |
6.6 | ES62x-PT1 | 低频T型电压测量探头 |
6.7 | ES62x-PT2 | 高频T型电压测量探头 |
TLP系统配套示波器 | ||
ES62X-OS1000 | 1 GHz带宽数字示波器,4通道( TLP, HMM, HBM, 和浪涌测试推荐配置) | |
ES62X-OS4000 | 4 GHz带宽数字示波器,4通道 (VF-TLP测试推荐配置) |
最大短路电流 | 25A, 50A, 100A |
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The ES620 Compact Pulsed IV-Curve Test and Analysis System is our new development for 2015. It is an advanced and compact pulsed IV-curve characterization system designed to simulate pulsed ESD events such as TLP, vf-TLP, HMM, HBM, EFT, and LV-Surge. It will monitor the transient voltage and current waveform during the pulse in ps or ns segment, and test the pre- and post-pulse status (leakage current, breakdown voltage, biasing current, static IV curve, etc…) of the device under test (DUT), such as protection devices, semiconductors, circuit modules, touch panel sensor, etc.
Most configurable TLP Pulsed IV-Curve System
Ultra-Compact Design System
Ultra-fast Speed with multi-thread processing
Currently 25 A, 50 A,and 100 A models available
High quality TLP pulses
Test Function Expandable with vf-TLP, HMM, HBM, and LV-Surge options
Automatic failure detection methods including:
DC Spot Check (V or I), Static IV, Fuse, Breakdown, Bias Source Fluctuation, and customization available
Software controlled pulsing: Burst, Continuous, IV-Curve Characterization
Rise-Time options from 60 ps to 50 ns *(depends on model)
Pulse-Width options from 1 ns to 3200 ns *(depends on model)
The ES620 Compact Pulsed IV-Curve Test and Analysis System is our new development for 2015. It is an advanced and compact pulsed IV-curve characterization system designed to simulate pulsed ESD events such as TLP, vf-TLP, HMM, HBM, EFT, and LV-Surge. It will monitor the transient voltage and current waveforms during the pulse in ps or ns segments, and test the pre- and post-pulse status (leakage current, breakdown voltage, biasing current, static IV curve, etc…) of the device under test (DUT). Common DUT’s include protection devices, semiconductors, circuit modules, touch panel sensor, etc.
The Transmission Line Pulse (TLP) test and analysis function is designed to meet ANSI/ESD STM5.5.1-2014 test standards. Our system generates high quality rectangular pulses to devices while recording both the current through and voltage across the device. This gives a pulsed IV curve that allows users to characterize the device’s transient response in nanosecond time windows. Advanced automatic device failure detection methods such as leakage testing, static IV curve, and fuse and spark are incorporated.
The very fast TLP (vf-TLP) test and analysis function is designed to meet ANSI/ESD SP5.5.2-2007 test standard practice. The vf-TLP test function is designed to simulate the CDM speed ESD event and captures the current through and voltage across the device under very high speeds (approximately 100 ps rise-time). This allows the user to study the response speed and peak voltage of a device.
The Human Metal Model (HMM) test and analysis function is designed to meet ANSI/ESD SP5. 6-2009 test standard practice alternative test method for IC to IEC61000-4-2 system level ESD. It gives equivalent waveform to an ideal standard waveform for low Ohmic devices and eliminates many IEC gun test problems, such as repeatability, imprecise gun tip, impedance mismatch, EMI interferences from unshielded relays, and special set-up with large ground planes and coupling planes, for component or wafer level tests.
This system features complete software control and customizable rise-time and pulse width selections, great compatibility with IVI instruments, compact size, and an affordable price.
Applications:
Wafer level ESD testing
PCB/package level ESD testing
System/circuit ESD testing
Safe Operation Area (SOA) testing
Charge recovery time testing
Differential ESD pulse injection
Touchscreen ITO trace fuse testing
Touchscreen ITO trace spark testing
TLP pulse current injection meets and exceeds ANSI/ESD STM 5.5.1-2008
vf-TLP pulse current injection meets and exceeds ANSI/ESD SP5.5.2-2007
HMM pulse current injection equivalent to IEC61000-4-2 waveform for low Ohmic devices
ES620 Transmission Line Pulse Base IV-Curve System
Parameters | ES620-25 | ES620-50 | ES620-100 | Unit | Comments |
Output voltage @ open load | ± 0.5 ~ 1250 | ± 0.5 ~ 2500 | ± 0.5 ~ 5000 | V | |
Output voltage @ 50 Ω load | ± 0.25 ~ 625 | ± 0.5 ~ 1250 | ± 0.5 ~ 2500 | V | |
Min voltage step @ 50 Ω load from Min to 40 V | 0.01 | 0.01 | 0.02 | V | with 46 dB reflection rejection |
Min voltage step @ 50 Ω load from 40V to Max | 0.1 | 0.1 | 0.2 | V | with 6 dB reflection rejection |
Output voltage precision | Better than 5 % | % | After self-calibration | ||
Output current @ short load | ± 0.01 ~ 25 | ± 0.02 ~ 50 | ± 0.04 ~ 100 | A | |
Output current @ 50 Ω load | ± 0.005 ~ 12.5 | ± 0.01 ~ 25 | ± 0.02 ~ 50 | A | |
Peak power @ 50 Ω load | ≥ 7.813 | ≥ 31.25 | ≥ 125 | kW | |
Intrinsic TLP rise-time | ≤ 0.2 | ≤ 0.2 | ≤ 0.3 | ns | 60 ps option available on ES620-25 |
Other rise-time options | 0.06 ~ 50 | ns | Depends on model, check table 2 | ||
Intrinsic TLP pulse width | 100 ± 1 | ns | Default | ||
Other pulse-width options | 1 ~ 3200 | 5 ~ 1000 | 5 ~ 1000 | ns | Depends on model, check table 3 |
Test repetition time | Typical 0.2 ~ 2 | s | OSC, SMU and state dependent | ||
Dimensions | 347 X 300 X 145 | mm | |||
Weight | 5 | 6 | 8 | kg | |
Direct I &V Measurement method | Direct I &V Probe A6213-T1 (CT-2 and 1K Pick-T) and Method included, Direct IV Probe is CT-2 and 1K Pick-T | ||||
Supported oscilloscopes | All models from Tektronix, Agilent, LeCroy, Rigol. |
Others will be supported on request | |||
Supported SMU | Keithley 24xx/26xx series SMU |
Others will be supported on request |
ES620-HMM1 External Human Metal Model Module
(short circuit DUT, 100 Ω HMM per ANSI/ESD SP5.6-2009)
Parameters | ES620-25 | ES620-50 | ES620-100 | Unit | Comments |
HMM equivalent IEC pulse level | 6 | 12 | 24 | kV | ≤ ± 10 % (better than ±30% IEC ) |
HMM first peak current | 22.5 | 45 | 90 | A |
3.75 A per 1 kV ≤ ± 10 % IEC 61000-4-2 (R=330Ω, C=150pF) |
HMM current @ 30 ns | 12 | 24 | 48 | A | ≤ ± 10 % (better than ±30% IEC ) |
HMM current @ 60 ns | 6 | 12 | 24 | A | ≤ ± 10 % (better than ±30% IEC ) |
ES620-HBM1 External Human Body Model Module
(ANSI/ESDA/JEDEC JS-001-2014 R=1.5 kΩ, C=100 pF)
Parameters | ES620-25 | ES620-50 | ES620-100 | Unit | Comments |
Maximum HBM Test Level | ± 2 | ± 4 | ± 8 | Kv | |
Minimum HBM Test Level | ± 10 | V | |||
Minimum Test Level Step | 1 | V | PCB controlled via USB | ||
Charge Removal Resistance | 10 K | Ohm | |||
Voltage Output Sensitivity | 1/201 | V/V | ± 3% into 50 Ohm | ||
Current Sensor Sensitivity | 1 | V/A | ± 3% into 50 Ohm | ||
DC Test Series Resistance | |||||
Measurement Repetition Time | >= 1 | S | Per Standard 1P/S Maximum | ||
Physical Dimensions | 90 X 90 X 130 | mm |
ES620-LVS1 External Low Voltage Surge Module
(TBD)
Line | Part # or Option # | Description |
TLP IV-Curve System Basic Configuration | ||
1.1 | ES620-25 | ES620 Compact TLP IV-Curve System, 25 A Base Unit |
1.2 | ES620-50 | ES620 Compact TLP IV-Curve System, 50 A Base Unit |
1.3 | ES620-100 | ES620 Compact TLP IV-Curve System, 100 A Base Unit |
Pulse Rise-time Options | ||
2.1 | ES620-VF | Upgrade Intrinsic TLP rise-time to the faster limit |
2.2 | ES62x-PRT4 |
Programmable pulse rise-time filter X4 module (Default: Intrinsic, 1 ns, 5 ns, 10 ns, customization available) |
2.3 | ES62x-PRT7 |
Programmable pulse rise-time filter X7 module (Default: Intrinsic, 0.5ns, 1 ns, 2ns, 5 ns, 10 ns, 20ns, customization available ) |
2.4 | ES62x-ERTF | External Rise-time Filter (customizable from 0.1 ~ 50 ns) |
Pulse Width Options | ||
3.1 | ES620-MPLEx | Manual Pulse Width External Change Option |
3.2 | ES620-PPL4 | Programmable Internal pulse length X4 module |
3.3 | ES620-PPL7 | Programmable Internal pulse length X7 module |
External Pulse Module Options | ||
4.1 | ES620-HBM1 |
Human Body Model (HBM) ESD Pulse Module and Measurement Setup Option (ANSI/ESDA/JEDEC JS-001-2014 Pulse Test with IV Measurement) |
4.2 | ES620-HMM1 |
Human Metal Model (HMM) ESD Pulse Module and Measurement Setup Option ( IEC61000-4-2 Pulse Test with IV Measurement) |
4.3 | ES620-LVS1 |
Low Voltage Surge Pulse Module and Measurement Options ( IEC61000-4-5 Pulse Test with IV Measurement) |
DC Bias & Leakage Measurement Options | ||
5.1 | ES62X -LTK2400 | Leakage Measurement Options with Keithley 2400 SMU integrated |
5.2 | ES62X -LTKSEM | Leakage Test Switch Module for Single Port ESD Injection |
5.3 | ES62X -BTK2220 | Programmable Dual Channel DC Supply integrated with TLP for Biasing Control |
5.4 | ES62X-BT1 | High Frequency TLP Test Bias Tee, 300 k – 20 GHz, 1A DC Current. |
5.5 | ES62X-BT2 | High Current TLP Test Bias Tee, 30K-6GHz, 2A DC Current |
ESD Injection and IV-Curve Measurement Options | ||
6.1 | ES62X-CTX | Overlap-TDR Measurement Setup for Component Test |
6.2 | ES62X-VFM | Non-overlap TDR Measurement Setup for High Speed VF-TLP Test |
6.3 | ES62X-CMPS | Compact Manual Probe Station with flexible moving vacuum chuck and microscope |
6.4 | ES62x-XYZR | Precision XYZ Micro Manipulator Set for probing with 2 coaxial high-resolution 100:1 (or 50:1) rotary probe holders, 2 straight mounting probe holders |
6.5 | ES62x-DIFESD | Differential ESD Injection and IV measurement option |
6.6 | ES62x-PT1 | Low Frequency Voltage Measurement Pick Tee |
6.7 | ES62x-PT2 | High Frequency Voltage Measurement Pick Tee |
Oscilloscope Paired with TLP System | ||
ES62X-OS1000 | Digital oscilloscope with 1 GHz BW, 4CH (Recommended for TLP, HMM, HBM, and surge test) | |
ES62X-OS4000 | Digital oscilloscope with 4 GHz BW, 4CH (Recommended for VF-TLP test) | |
Customized solutions might be available upon request
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